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Ferroelectric transistor memory could run on 99 percent less power than flash

Wednesday, September 28, 2011


Progress of Ferroelectric Random Access Memory (FeRAM) for a few years now, not least because it offers the tantalizing promise of 1.6GB/s read and write speeds and crazy data densities. But researchers at Purdue University reckon we've been looking in the wrong place this whole time: the real action is with their development of FeTRAM, which adds an all-important 'T' for 'Transistor'. Made by combining silicon nanowires with a ferroelectric polymer, Purdue's material holds onto its 0 or 1 polarity even after being read, whereas readouts from capacitor-based FeRAM are destructive. Although still at the experimental stage, this new type of memory could boost speeds while also reducing power consumption by 99 percent.


Tags: Ferroelectric , Ferroelectric transistor, Ferroelectric transistor memory, Ferroelectric transistor memory better than flash, Purdue University reckon, tech.currentblips, currentblips technomatic,


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